- Title
- Reversible, long-term passivation of Ge(001) by a Ba-induced incorporated phase
- Creator
- Koczorowski, W.; Grzela, T.; Puchalska, A.; Jurczyszyn, L.; Czajka, R.; Radny, M. W.
- Relation
- Applied Surface Science Vol. 419, Issue October 2017, p. 305-310
- Publisher Link
- http://dx.doi.org/10.1016/j.apsusc.2017.04.251
- Publisher
- Elsevier
- Resource Type
- journal article
- Date
- 2017
- Description
- Thermal stability and passivation properties of Ba-induced incorporation phase on Ge(001) under ultra-high vacuum (UHV) conditions are investigated using scanning tunneling microscope (STM). We show that the generic c(4 × 2) reconstruction of Ge(001) can be easily reinstated in the Ba/Ge(001) sample, stored for more than 40 days under UHV and room temperature conditions, just by thermal annealing at 1070 K under UHV. Our data implies that this process occurs predominantly via temperature assisted desorption of Ba adatoms from the on-top phase formed as an intermediate during annealing process and known to preserve the c(4 × 2) reconstruction of Ge(001). The reported results indicate that the Ba-induced incorporated phase on Ge(001) is very effective in protecting the Ge(001) substrate against destructive adsorption of residual gases and can be utilized for long-term, non-destructive Ge sample storage under UHV conditions.
- Subject
- germanium; ultra-high vacuum scanning tunneling microscopy; barium; desorption
- Identifier
- http://hdl.handle.net/1959.13/1352836
- Identifier
- uon:30966
- Identifier
- ISSN:0169-4332
- Language
- eng
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